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Silicon-Germanium Strained Layers and Heterostructures: Semi-conductor and semi-metals series (Volume 74) (Semiconductors and Semimetals, Volume 74) 🔍
Robert K Willardson; Albert C Beer; Eicke R Weber; Jacques I Pankove; W. T Tsang; R. F Wood; C. W White; R. T Young; Raymond Dingle; Jacek K Furdyna; Jacek Kossut; Esther Conwell; Robert B Marcus; Toshiaki Ikoma; Thomas P Pearsall; Noble M Johnson; Mark Reed; David G Seiler; Christopher L Littler; Katherine T Faber; Kevin J Malloy; Richard K Ahrenkiel; Mark S Lundstrom; Arthur C Gossard; Richard A Kiehl; T. C. L. Gerhard Sollner; Fumio Shimura; T. E Schlesinger; Ralph B James; R. L Gunshor; A. V Nurmikko; Gérard Ghibaudo; Constantinos Christofides; Paul W Kruse; David D Skatrud; G. B Stringfellow; M. George Craford; David J Lockwood; Theodore D Moustakas; Michael Stavola; Yoon Soo Park; Tadeusz Suski; William Paul; Robert Hull; John C Bean; Elsa Garmire; Alan Kost; Mitsuru Sugawara; Gerhard P Willeke; Norbert H Nickel Academic; Academic Press, Elsevier Ltd., Amsterdam, 2003
英语 [en] · PDF · 18.0MB · 2003 · 📗 未知类型的图书 · 🚀/ia · Save
描述
The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices.
Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.
* Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review
* The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject
* Appropriate for students and senior researchers
备选标题
Silicon-Germanium Strained Layers and Heterostructures, Volume 74: Semi-conductor and semi-metals series (Semiconductors and Semimetals)
备选标题
Semiconductors and semimetals. Vol. 74 : a treatise : Silicon-germanium strained layers and heterostructures
备选作者
Robert K Willardson; Albert C Beer; Eicke R Weber; Jacques I Pankove; W. T Tsang; R. F Wood; C. W White; R. T Young; Raymond Dingle; Jacek K Furdyna; Jacek Kossut; Esther Conwell; Robert B Marcus; Toshiaki Ikoma; Thomas P Pearsall; Noble M Johnson; Mark Reed; David G Seiler; Christopher L Littler; Katherine T Faber; Kevin J Malloy; Richard K Ahrenkiel; Mark S Lundstrom; Arthur C Gossard; Richard A Kiehl; T. C. L. Gerhard Sollner; Fumio Shimura; T. E Schlesinger; Ralph B James; R. L Gunshor; A. V Nurmikko; Gérard Ghibaudo; Constantinos Christofides; Paul W Kruse; David D Skatrud; G. B Stringfellow; M. George Craford; David J Lockwood; Theodore D Moustakas; Michael Stavola; Yoon Soo Park; Tadeusz Suski; William Paul; Robert Hull; John C Bean; Elsa Garmire; Alan Kost; Mitsuru Sugawara; Gerhard P Willeke; Norbert H Nickel
备选作者
Jain, S. C. (Suresh C.), 1926-; Willander, M
备用出版商
San Diego, Calif. ; London: Academic
备用出版商
Academic Press, Incorporated
备用出版商
Morgan Kaufmann Publishers
备用出版商
Brooks/Cole
备用版本
Semiconductors and semimetals -- v. 74, 1st ed., San Diego, Calif, London, California, 2003
备用版本
Semiconductors and semimetals, v. 74, Second edition, San Diego, Calif, 2003
备用版本
United States, United States of America
备用版本
2Rev Ed edition, October 6, 2003
元数据中的注释
Includes bibliographical references (p. 243-280) and index.
备用描述
Extensive work was done on Si1-x Gex strained layers and devices during 1980s and early 1990s [1].
备用描述
xiv, 308 p. : 24 cm
Includes bibliographical references (p. 243-280) and index
开源日期
2024-07-01
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