The Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale was held from 31 August to 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in different aspects of the study of semiconductor interfaces and in small-scale devices where the interface properties can be very significant It was our aim that this would help focus research of the growth and characterization of semiconductor interfaces at the atomic scale on the issues that will have the greatest impact on devices of the future. Some 30 participants from industrial and academic research institutes and from 11 countries contributed to the workshop with papers on their recent wode. . 'There was ample time for discussion after each talk. as well as a summary discussion at the end of the meeting. The major themes of the meeting are described below. The meeting included several talks relating to the different growth techniques used in heteroepitaxial growth of semiconductors. Horikoshi discussed the atomistic processes involved in MBE, MEE and MOCVD, presenting results of experimental RHEED and photoluminescence measurements; Foxon compared the merits of MBE, MOCVD, and eBE growth; Molder described RHEED studies of Si/Ge growth by GSMBE, and Pashley discussed the role of surface reconstructions in MBE growth as seen from STM studies on GaAs. On the theoretical side, Vvedensky described several different methods to model growth: molecular dynamics, Monte Carlo techniques, and analytic modeling.

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Proceedings of the NATO Advanced Research Workshop on The Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale, Riva del Garda, Italy, August 31-September 2, 1992

H. W. M Salemink; M. D Pashley; North Atlantic Treaty Organization Scientific Affairs Division; NATO Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Subnanometer Scale

edited by H. W. M. Salemink, M. D. Pashley

Springer Science + Business Media BV

Kluwer Academic Publishers

NATO ASI Series, Series E: Applied Sciences -- 243, NATO ASI Series, Series E: Applied Sciences -- 243, Dordrecht, Netherlands, 1993

Softcover reprint of the original 1st ed. 1993, 2012

NATO ASI series, Dordrecht ; Boston, ©1993

Springer Nature, Dordrecht, 2012

Netherlands, Netherlands

lg968257

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Front Matter....Pages i-xi
Surface Atomic Processes during Epitaxial Growth....Pages 1-10
Formation Mechanism of CuPt-Type Sublattice Ordering for III-III-V Type Compound Semiconductors....Pages 11-24
Surface Chemistry in the Si/Ge GSMBE system studied using RHEED....Pages 25-33
Diffusion of Si in δ-Doped GaAs Studied by Magneto Transport....Pages 35-43
Theory of Atomic-Scale Processes during Epitaxial Growth: Current Status....Pages 45-55
A Comparison of Growth by Molecular Beam Epitaxy, Metalorganic Chemical Vapour Deposition and Chemical Beam Epitaxy....Pages 57-61
The Role of Surface Reconstructions in MBE Growth of GaAs....Pages 63-73
A Lattice Gas Analysis of Binary Alloys on a Tetrahedral Lattice....Pages 75-81
Resonant Tunnelling via the Bound States of Shallow Donors....Pages 83-88
Engineering of Semiconductor Heterostructures by Ultrathin Control Layers....Pages 89-103
Interface Chemical Structure, Band Offsets and Optical Properties of Various III-V Compounds Heterostructures....Pages 105-113
Dipole Layers at GaAs Heterojunctions and their Investigation....Pages 115-120
Clustering and Correlations on GaAs — Metal Interface....Pages 121-126
Cross-Sectional Scanning Tunneling Microscopy of GaAs Doping Superlattices: Pinned vs. Unpinned Surfaces....Pages 127-137
Semiconductor Interfaces: Structure, Properties and Processing at the Atomic Level....Pages 139-149
Epitaxial Interfaces of III-V Heterostructures: Atomic Resolution, Composition Fluctuations and Doping....Pages 151-160
Group IV Strained Layer Systems....Pages 161-171
Misfit Accommodation During Heteroepitaxial Growth....Pages 173-180
Smear-out of the Ge/Si Interface in Gas Source MBE Monitored by Rheed....Pages 181-189
Optical Properties of Imperfecṫ Si-Ge Heterostructures....Pages 191-197
Si 1-x-y Ge x C y Growth and Properties of the Ternary System....Pages 199-206
Atomic-Scale View of Epitaxial Layers with Cross-Sectional Scanning Tunneling Microscopy....Pages 207-216
Atomic-Scale Understanding and Controllability of Heterointerfaces in Quantum Microstructures....Pages 217-230
Do Periodic Interface Corrugations Cause the Unusual Optical Properties of GaAs/AIAs Heterostructures Grown on Non-(100)-Oriented Substrates?....Pages 231-239
Strained Layer Quantum Well Semiconductor Lasers....Pages 241-249
Back Matter....Pages 251-256

This book comprises review papers by leading scientists in the fields of semiconductor growth, analysis and device structures. In particular, it contains reviews of the state-of-the-art in the following topics: (a) theoretical and experimental treatment of epitaxial growth; (b) electronic bandstructure on the atomic to nanometer scale in semiconductor interfaces; (c) analysis of semiconductor interfaces and superlattices by photo electrospectroscopy, HRTEM and STM; (d) discussion of relevant properties and criteria in Group IV and III--V devices. All the reviews place an emphasis on the relevant properties on the atomic to nanometer scale as this is extremely important for superlattice structures and devices. For those working in semiconductor superlattices, MBE and ultra-thin-layer (quantum) phenomena: the book provides a state of the art review and extensive reference to recent work.

Proceedings of the NATO Advanced Research Workshop on The Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale, Riva del Garda, Italy, August 31-September 2, 1992

2013-08-01