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Fundamentals of Nanoscaled Field Effect Transistors [recurso electrónico 🔍
Amit Chaudhry (auth.) Springer-Verlag New York Inc., 1st ed. 2013, New York, NY, 2013
英语 [en] · PDF · 3.5MB · 2013 · 📘 非小说类图书 · 🚀/lgli/lgrs/nexusstc/scihub/upload/zlib · Save
描述
__Fundamentals of Nanoscaled Field Effect Transistors__ gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
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lgli/A:\compressed\10.1007%2F978-1-4614-6822-6.pdf
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lgrsnf/A:\compressed\10.1007%2F978-1-4614-6822-6.pdf
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nexusstc/Fundamentals of Nanoscaled Field Effect Transistors/0e186c67aee6dca23e99ef8b0fcfe0d9.pdf
备用文件名
scihub/10.1007/978-1-4614-6822-6.pdf
备用文件名
zlib/Engineering/Electrical & Electronic Engineering/Amit Chaudhry/Fundamentals of Nanoscaled Field Effect Transistors_2115984.pdf
备选作者
PdfCompressor 3.1.34
备选作者
by Amit Chaudhry
备选作者
Chaudhry, Amit
备用出版商
Springer New York; Imprint: Springer
备用出版商
Springer US
备用版本
United States, United States of America
备用版本
New York, NY, United States, 2013
备用版本
uuuu
元数据中的注释
sm21718241
元数据中的注释
producers:
Adobe PDF Library 9.9
元数据中的注释
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元数据中的注释
MiU
备用描述
Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-kappa technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book. In summary, this book: Covers the fundamental principles behind nanoelectronics/microelectronics Includes chapters devoted to solutions tackling the quantum mechanical effects occurring at nanoscale Provides some case studies to understand the issue mathematically Fundamentals of Nanoscaled Field Effect Transistors is an ideal book for researchers and undergraduate and graduate students in the field of microelectronics, nanoelectronics, and electronics
备用描述
Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book. In summary, this book: Covers the fundamental principles behind nanoelectronics/microelectronics Includes chapters devoted to solutions tackling the quantum mechanical effects occurring at nanoscale Provides some case studies to understand the issue mathematically Fundamentals of Nanoscaled Field Effect Transistors is an ideal book for researchers and undergraduate and graduate students in the field of microelectronics, nanoelectronics, and electronics
备用描述
Front Matter....Pages i-xiv
Scaling of a MOS Transistor....Pages 1-24
Nanoscale Effects: Gate Oxide Leakage Currents....Pages 25-36
Nanoscale Effects: Inversion Layer Quantization....Pages 37-60
Dielectrics for Nanoelectronics....Pages 61-72
Germanium Technology....Pages 73-83
Biaxial s-Si Technology....Pages 85-131
Uniaxial s-Si Technology....Pages 133-152
Alternate Structures for Nanoelectronic Applications....Pages 153-167
Graphene Technology....Pages 169-175
Back Matter....Pages 177-201
备用描述
Scaling of a MOS Transistor
Nanoscale Effects- Gate Oxide Leakage Currents
Nanoscale Effects- Inversion Layer Quantization
Dielectrics for Nanoelectronics
Germanium Technology
Biaxial s-Si Technology
Uniaxial s-Si Technology
Alternate MOS Structures
Graphene Technology.
备用描述
This book covers the fundamental principles behind nanoelectronics and microelectronics. It includes chapters devoted to solutions tackling the quantum mechanical effects occurring at nanoscale, and provides some case studies to understand the issue mathematically
备用描述
Keine Beschreibung vorhanden.
Erscheinungsdatum: 23.04.2013
开源日期
2013-08-01
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