Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis.

nexusstc/Breakdown Phenomena in Semiconductors and Semiconductor Devices/02727aa7c5dbacbe0181d5c1533f68a8.pdf

lgli/Y. dl_avaxhome 87010 _=breakdphensem.pdf

lgrsnf/Y. dl_avaxhome 87010 _=breakdphensem.pdf

zlib/Engineering/Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein/Breakdown Phenomena in Semiconductors and Semiconductor Devices_701236.pdf

M E Levinshteĭn; Juha Kostamovaara; Sergey Vainshtein; World Scientific (Firm)

Levinshtein, Michael E, Kostamovaara, Juha, Vainshtein, Sergey

Juha Kostamovaara, Sergey Vainshtein, Michael Levinshtein

Mikhail Efimovich Levinshteĭn

Michail E Levinštein

World Scientific Publishing Company

Selected topics in electronics and systems -- v. 36, Singapore, Hackensack, N.J, Singapore, 2005

Selected topics in electronics and systems, v. 36, New Jersey ; London, ©2005

World Scientific Publishing Company, New Jersey, 2005

September 30, 2005

1, 20050907

87010

avaxhome.ws

lg270725

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Includes bibliographical references (p. 185-194) and indexes.

Contents 12
Preface 8
Chapter 1 Introductory Chapter 16
1.1 Elementary act of impact ionization 16
1.2 Auger recombination 20
1.3 Energy of electrons and holes as a function of electric field 23
1.4 Main approaches for describing ionization phenomena 25
1.4.1 Approximation of the characteristic breakdown field F; 25
1.4.2 Monte- Carlo simulation 28
1.4.3 Approximation of ionization rates 29
Chapter 2 Avalanche Multiplication 36
2.1 Fundamentals of avalanche multiplication 36
2.2 Avalanche photodiodes 41
2.2.1 Spectral sensitivity 41
2.2.2 Dark current 42
2.2.3 Quantum eficiency 44
2.2.4 Time response 44
2.2.5 Multiplication factor 47
2.2.6 Avalanche excess noise 51
Chapter 3 Static Avalanche Breakdown 54
3.1 Introduction 54
3.2 General form of the static “breakdown” current-voltage characteristic 54
3.2.1 Microplasma breakdown 56
3.2.2 Homogeneous ( ccmature77) breakdown 59
3.2.2.1 Contact resistivity 59
3.2.2.2 Thermal resistance 60
3.2.2.3 Space-charge resistance 62
3.2.3 Negative diferential resistance 65
3.2.3.1 Qualitative consideration 65
3.2.3.2 The zero doping ( p - i - n) structure 65
3.2.3.3 Computer simulation 70
3.2.4 Second part of the current-voltage characteristic, with posi- tive diflerential resistance at very high current densities 73
3.3 Avalanche suppressor diodes 75
3.3.1 Principle of operation 75
3.3.2 Main parameters 77
3.4 IMPATT diodes 80
3.4.1 Principle of operation 81
3.4.2 Some physical problems that arise at very high frequencies 90
Chapter 4 Avalanche Injection 96
4.1 Introduction 96
4.2 Avalanche injection in n + - n - n+ ( p + - p - p + ) structures 96
4.3 Avalanche injection in bipolar transistors 106
4.3.1 Introduction 106
4.3.2 Avalanche transistor: conventional regime of operation 107
4.3.2.1 Difference in breakdown voltages of a BJT between the common- base and common-emitter configurations 107
4.3.2.2 Dependence of the bipolar transistor gain coefficient QO o n current density 113
4.3.2.3 Main features of ABT operation in a conventional regime 118
4.4 Operation regime of a Si avalanche transistor at very high cur- rent densities 120
4.4.1 Introduction 120
4.4.2 Steady-state collector field distribution. Residual collector voltage 124
4.4.3 Transient properties of Si avalanche transistor at extreme current densities 130
4.5 Operation regime of GaAs avalanche transistor at very high current densities 137
4.5.1 Experimental results 137
4.5.2 Breakdown in moving Gunn domain in GaAs: qualitative analysis 139
4.5.3 Computer simulations of superfast switching in GaAs avalanche transistor 148
Chapter 5 Dynamic Breakdown 152
5.1 Introduction 152
5.2 Impact ionization front (TRAPATT zone) 155
5.3 Silicon Avalanche Sharpers (SAS) 157
5.3.1 Computer simulations and comparison with experimental results 159
5.3.2 Stability of the plane ionization front 163
5.3.2.1 Short-wavelength instability of the plane ionization front 165
5.3.2.2 Long-wave length instability of the plane ionization front 167
5.3.3 The problem of the initial carriers 169
5.4 GaAs diodes with delayed breakdown 172
5.5 Superfast switching of GaAs thyristors 177
5.6 Main features of streamer breakdown 183
5.6.1 Introduction 183
5.6.2 Analytical theory of a streamer discharge 184
5.6.3 Computer simulation 191
Conclusion 194
List of Symbols 196
Bibliography 200
Index 210
AUTHOR INDEX 214

Contents......Page 12
Preface......Page 8
1.1 Elementary act of impact ionization......Page 16
1.2 Auger recombination......Page 20
1.3 Energy of electrons and holes as a function of electric field......Page 23
1.4.1 Approximation of the characteristic breakdown field F;......Page 25
1.4.2 Monte- Carlo simulation......Page 28
1.4.3 Approximation of ionization rates......Page 29
2.1 Fundamentals of avalanche multiplication......Page 36
2.2.1 Spectral sensitivity......Page 41
2.2.2 Dark current......Page 42
2.2.4 Time response......Page 44
2.2.5 Multiplication factor......Page 47
2.2.6 Avalanche excess noise......Page 51
3.2 General form of the static “breakdown” current-voltage characteristic......Page 54
3.2.1 Microplasma breakdown......Page 56
3.2.2.1 Contact resistivity......Page 59
3.2.2.2 Thermal resistance......Page 60
3.2.2.3 Space-charge resistance......Page 62
3.2.3.2 The zero doping ( p - i - n) structure......Page 65
3.2.3.3 Computer simulation......Page 70
3.2.4 Second part of the current-voltage characteristic, with posi- tive diflerential resistance at very high current densities......Page 73
3.3.1 Principle of operation......Page 75
3.3.2 Main parameters......Page 77
3.4 IMPATT diodes......Page 80
3.4.1 Principle of operation......Page 81
3.4.2 Some physical problems that arise at very high frequencies......Page 90
4.2 Avalanche injection in n + - n - n+ ( p + - p - p + ) structures......Page 96
4.3.1 Introduction......Page 106
4.3.2.1 Difference in breakdown voltages of a BJT between the common- base and common-emitter configurations......Page 107
4.3.2.2 Dependence of the bipolar transistor gain coefficient QO o n current density......Page 113
4.3.2.3 Main features of ABT operation in a conventional regime......Page 118
4.4.1 Introduction......Page 120
4.4.2 Steady-state collector field distribution. Residual collector voltage......Page 124
4.4.3 Transient properties of Si avalanche transistor at extreme current densities......Page 130
4.5.1 Experimental results......Page 137
4.5.2 Breakdown in moving Gunn domain in GaAs: qualitative analysis......Page 139
4.5.3 Computer simulations of superfast switching in GaAs avalanche transistor......Page 148
5.1 Introduction......Page 152
5.2 Impact ionization front (TRAPATT zone)......Page 155
5.3 Silicon Avalanche Sharpers (SAS)......Page 157
5.3.1 Computer simulations and comparison with experimental results......Page 159
5.3.2 Stability of the plane ionization front......Page 163
5.3.2.1 Short-wavelength instability of the plane ionization front......Page 165
5.3.2.2 Long-wave length instability of the plane ionization front......Page 167
5.3.3 The problem of the initial carriers......Page 169
5.4 GaAs diodes with delayed breakdown......Page 172
5.5 Superfast switching of GaAs thyristors......Page 177
5.6.1 Introduction......Page 183
5.6.2 Analytical theory of a streamer discharge......Page 184
5.6.3 Computer simulation......Page 191
Conclusion......Page 194
List of Symbols......Page 196
Bibliography......Page 200
Index......Page 210
AUTHOR INDEX......Page 214

1. Introductory chapter. 1.1. Elementary act of impact ionization. 1.2. Auger recombination. 1.3. Energy of electrons and holes as a function of electric field. 1.4. Main approaches for describing ionization phenomena -- 2. Avalanche multiplication. 2.1. Fundamentals of avalanche multiplication. 2.2. Avalanche photodiodes -- 3. Static avalanche breakdown. 3.1. Introduction. 3.2. General form of the static "breakdown" current-voltage characteristic. 3.3. Avalanche suppressor diodes. 3.4. IMPATT diodes -- 4. Avalanche injection. 4.1. Introduction. 4.2. Avalanche injection in n[symbol](p[symbol]) structures. 4.3. Avalanche injection in bipolar transistors. 4.4. Operation regime of a Si avalanche transistor at very high current densities. 4.5. Operation regime of GaAs avalanche transistor at very high current densities -- 5. Dynamic breakdown. 5.1. Introduction. 5.2. Impact ionization front (TRAPATT zone). 5.3. Silicon Avalanche Sharpers (SAS). 5.4. GaAs diodes with delayed breakdown. 5.5. Superfast switching of GaAs thyristors. 5.6. Main features of streamer breakdown

"The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis." --Book Jacket

2010-05-31